Hexagonal indium double layer onSi(111)−7×3

Whispering gallery modes in indium oxide hexagonal microcavities

Inter-layer potential for hexagonal boron nitride.

A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture wel...

Electrical Double Layer

Modification of Deposition Process Parameters for Uniform Indium Layer Deposition

MODIFICATION OF DEPOSITION PROCESS PARAMETERS FOR UNIFORM INDIUM LAYER DEPOSITION Isaac Butt Old Dominion University, 2017 Director: Dr. Sylvain X. Marsillac The need for more efficient light to energy converting cells has long been a subject of research and development. With abundant availability of solar energy that the earth receives, the photovoltaic industry has sought materials that could...

Indium segregation measured in InGaN quantum well layer

The indium segregation in InGaN well layer is confirmed by a nondestructive combined method of experiment and numerical simulation, which is beyond the traditional method. The pre-deposited indium atoms before InGaN well layer growth are first carried out to prevent indium atoms exchange between the subsurface layer and the surface layer, which results from the indium segregation. The uniform s...